Samsung – 990 Pro 1tb Internal SSD Pcie Gen 4 Nvme Heat Sink

Samsung – 990 Pro 1tb Internal SSD Pcie Gen 4 Nvme Heat Sink Samsung 990 Pro 1TB NVMe PCIe 4.0 SSD with Heatsink is a high-performance internal storage solution designed for gaming, content creation, and demanding computing tasks. Engineered with PCIe Gen 4.0 technology, it delivers ultra-fast speeds and exceptional responsiveness, making it ideal for high-end PCs and compatible game consoles. The integrated heatsink ensures efficient thermal management, maintaining peak performance during intensive workloads while enhancing system stability and longevity. Product Features Ultra-Fast PCIe Gen 4.0 Performance Delivers blazing-fast sequential read speeds of up to 7,450 MB/s and write speeds up to 6,900 MB/s for rapid data access and file transfers. Integrated Heatsink for Thermal Control Built-in heatsink effectively dissipates heat, preventing thermal throttling and ensuring consistent high performance during heavy usage. Optimized for Gaming and High-End PCs Designed for modern gaming systems and client PCs, providing faster load times and smooth performance in demanding applications. Advanced Samsung V-NAND Technology Uses high-quality 3-bit MLC (TLC) V-NAND to deliver improved efficiency, endurance, and long-term reliability. High-Speed Random Performance Supports up to 1,200,000 IOPS read and 1,550,000 IOPS write for enhanced multitasking and system responsiveness. Compact M.2 2280 Form Factor Fits seamlessly into desktops and laptops with M.2 slots, offering a space-saving and efficient storage upgrade. Advanced Data Security Features Includes AES 256-bit encryption, TRIM, and S.M.A.R.T support for secure and optimized data management. Samsung Magician Software Support Enables drive monitoring, performance optimization, and firmware updates through Samsung’s management software. Product Specifications Model: Samsung 990 Pro (Heatsink Version) Storage Capacity: 1TB Form Factor: M.2 2280 (with heatsink) Interface: PCIe Gen 4.0 x4, NVMe 2.0 NAND Type: Samsung V-NAND 3-bit MLC Controller: Samsung in-house controller Cache Memory: 1GB LPDDR4 Performance Sequential Read Speed: Up to 7,450 MB/s Sequential Write Speed: Up to 6,900 MB/s Random Read (4KB, QD32): Up to 1,200,000 IOPS Random Write (4KB, QD32): Up to 1,550,000 IOPS Random Read (QD1): Up to 22,000 IOPS Random Write (QD1): Up to 80,000 IOPS Power and Environmental Average Power Consumption: Approx. 5.4 W Maximum Power Consumption: Approx. 7.8 W Idle Power Consumption: Max 50 mW Operating Temperature: 0°C to 70°C Voltage: 3.3 V ± 5% Reliability and Durability MTBF: 1.5 million hours Shock Resistance: 1,500 G, 0.5 ms Physical Characteristics Dimensions: 80 × 24.3 × 8.2 mm (with heatsink) Weight: Up to 28 g